Ferroelectric properties and switching endurance of Hf0.5Zr0.5O2 films on TiN bottom and TiN or RuO2 top electrodes. Issue 6 (17th February 2014)

• Record Type: Journal Article
• Authors: Park, Min Hyuk; Kim, Han Joon; Kim, Yu Jin; Jeon, Woojin; Moon, Taehwan; Hwang, Cheol Seong
• Is Part Of: Physica status solidi. Volume 8:Issue 6(2014:Jun.)
• Page Start: 532
• Page End: 535
• Publication Date: 2014-02-17
• Subjects: Solid state physics -- Periodicals; 530.4105
• DOI: 10.1002/pssr.201409017
• Languages: English
• ISSNs: 1862-6254

Abstract

<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <p> <boxed-text content-type="graphic" position="anchor" orientation="portrait"> <graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pghmhqjtr1" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /> </boxed-text> </p> <p>The effect of the top electrode (TE) on the ferroelectric properties and switching endurance of thin Hf_0.5Zr_0.5O₂ films was examined. The TiN/Hf_0.5Zr_0.5O₂/TiN capacitor can endure electric cycling up to 10⁹ times, which is promising for the next‐generation memory. RuO₂ TE was reduced during annealing due to the reactive TiN bottom electrode, resulting in the degradation of the ferroelectric properties and endurance. In addition, the endurance of the TiN/Hf_0.5Zr_0.5O₂/TiN capacitors was optimized by changing the film thickness and the postannealing temperature. (© 2014 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim)</p> </abstract>