Influence of power factor enhancement on the thermoelectric figure of merit in Mg2Si0.4Sn0.6 based materials. Issue 6 (21st May 2014)

• Record Type: Journal Article
• Authors: Dasgupta, T.; Stiewe, C.; de Boor, J.; Müller, E.
• Is Part Of: Physica status solidi. Volume 211:Issue 6(2014:Jun.)
• Page Start: 1250
• Page End: 1254
• Publication Date: 2014-05-21
• Subjects: Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.201300196
• Languages: English
• ISSNs: 1862-6300

Abstract

<abstract abstract-type="main"> <title> <x xml:space="preserve">Abstract</x> </title> <sec id="pssa201300196-sec-0001" sec-type="section"> <p>The influence of power factor enhancement on the superior thermoelectric (TE) performance of Mg₂(Si, Sn) is studied based on a comparison with Mg₂Si. Doped compounds with compositions of Mg₂(Si_0.4Sn_0.6) are synthesized and the TE properties measured between room temperature and 773 K. Carrier concentration and hall mobilities at room temperature are measured on selected samples. Enhancement of the density‐of‐states effective mass and mobilities comparable to Mg₂Si indicate band convergence in the solid solutions to be the cause of the power factor enhancement. Microstructural analysis shows the presence of secondary Si rich phases while the matrix corresponds to Mg₂(Si_0.3Sn_0.7). A doped compound with this composition is synthesized and exhibits superior <italic>ZT</italic> values (compared to the Mg₂(Si_0.4Sn_0.6) specimens) with a <italic>ZT</italic>_max ∼1.3 at 773 K.</p> </sec> </abstract>