Improved Exciton Dissociation at Semiconducting Polymer:ZnO Donor:Acceptor Interfaces via Nitrogen Doping of ZnO. (7th March 2014)

• Record Type: Journal Article
• Authors: Musselman, Kevin P.; Albert‐Seifried, Sebastian; Hoye, Robert L. Z.; Sadhanala, Aditya; Muñoz‐Rojas, David; MacManus‐Driscoll, Judith L.; Friend, Richard H.
• Is Part Of: Advanced functional materials. Volume 24:Number 23(2014)
• Page Start: 3562
• Page End: 3570
• Publication Date: 2014-03-07
• Subjects: Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adfm.201303994
• Languages: English
• ISSNs: 1616-301X

Abstract

<abstract abstract-type="main" xml:lang="en"> <title> <x xml:space="preserve">Abstract</x> </title> <p>Exciton dissociation at the zinc oxide/poly(3‐hexylthiophene) (ZnO/P3HT) interface as a function of nitrogen doping of the zinc oxide, which decreases the electron concentration from approximately 10¹⁹ cm⁻³ to 10¹⁷ cm⁻³, is reported. Exciton dissociation and device photocurrent are strongly improved with nitrogen doping. This improved dissociation of excitons in the conjugated polymer is found to result from enhanced light‐induced de‐trapping of electrons from the surface of the nitrogen‐doped ZnO. The ability to improve the surface properties of ZnO by introducing a simple nitrogen dopant has general applicability.</p> </abstract>