Photo‐Insensitive Amorphous Oxide Thin‐Film Transistor Integrated with a Plasmonic Filter for Transparent Electronics. (17th March 2014)

• Record Type: Journal Article
• Authors: Chang, Seongpil; Do, Yun Seon; Kim, Jong‐Woo; Hwang, Bo Yeon; Choi, Jinnil; Choi, Byung‐Hyun; Lee, Yun‐Hi; Choi, Kyung Cheol; Ju, Byeong‐Kwon
• Is Part Of: Advanced functional materials. Volume 24:Number 23(2014)
• Page Start: 3482
• Page End: 3487
• Publication Date: 2014-03-17
• Subjects: Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adfm.201304114
• Languages: English
• ISSNs: 1616-301X

Abstract

<abstract abstract-type="graphical" xml:lang="en" id="adfm201304114-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <bold>A novel amorphous‐indium‐gallium‐zinc‐oxide‐based application with stable switching characteristics</bold> under negative bias illumination is shown. Metallic nanohole‐based plasmonic filters are used for tuning the spectrum of the ambient light source, and the photosensitivity of the a‐IGZO‐TFT is investigated within a selectively controlled spectral range. The suggested thin‐film transistors show greatly improved stability even in a negative bias illumination stress environment. <boxed-text content-type="graphic" position="anchor" orientation="portrait"><graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pghmfk4w8z" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></boxed-text></p> </abstract>