The Large‐Area, Solution‐Based Deposition of Single‐Crystal Organic Semiconductors. Issue 5 (29th April 2014)

• Record Type: Journal Article
• Authors: Shaw, Leo; Bao, Zhenan
• Is Part Of: Israel journal of chemistry. Volume 54:Issue 5/6(2014)
• Page Start: 496
• Page End: 512
• Publication Date: 2014-04-29
• Subjects: Chemistry -- Periodicals; 540.5
• DOI: 10.1002/ijch.201400032
• Languages: English
• ISSNs: 0021-2148

Abstract

<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <p>Although solution processing has been hailed as a more industrially relevant route for the deposition of organic semiconductors to be used in devices, the quality and performance of solution‐deposited thin films of these materials have not been able to reach that of vapor‐grown single crystals until recently. Single crystals and single‐crystalline films benefit from the absence of grain boundaries and the reduction of crystalline defects that impede effective charge transport through the solid. Although solution‐phase deposition techniques for high‐quality single‐crystal growth have been reported, high‐throughput, large‐area deposition methods for single‐crystalline films remain challenging. However, a shift toward this direction has emerged in recent years and has produced a diversity of techniques to grow, deposit, and pattern organic semiconductor single crystals and thin films. In this review, we survey the physical basis for a variety of solution‐based single‐crystal growth and deposition methods and discuss their advantages and shortcomings in the hopes of inspiring new ways to approach these challenges.</p> </abstract>