Analysis of Dopant Atom Distribution and Quantification of Oxygen Vacancies on Individual Gd‐Doped CeO2 Nanocrystals. Issue 21 (14th May 2014)

• Record Type: Journal Article
• Authors: Stroppa, Daniel G.; Dalmaschio, Cleocir J.; Houben, Lothar; Barthel, Juri; Montoro, Luciano A.; Leite, Edson R.; Ramirez, Antonio J.
• Is Part Of: Chemistry. Volume 20:Issue 21(2014)
• Page Start: 6288
• Page End: 6293
• Publication Date: 2014-05-14
• Subjects: Chemistry -- Periodicals; 540
• DOI: 10.1002/chem.201400412
• Languages: English
• ISSNs: 0947-6539

Abstract

<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <p>This work reports the analysis of the distribution of Gd atoms and the quantification of O vacancies applied to individual CeO₂ and Gd‐doped CeO₂ nanocrystals by electron energy‐loss spectroscopy. The concentration of O vacancies measured on the undoped system (6.3±2.6 %) matches the expected value given the typical Ce³⁺ content previously reported for CeO₂ nanoparticles. The doped nanoparticles have an uneven distribution of dopant atoms and an atypical amount of O vacant sites (37.7±4.1 %). The measured decrease of the O content induced by Gd doping cannot be explained solely by the charge balance including Ce³⁺ and Gd³⁺ ions.</p> </abstract>