Improved Open‐ Circuit Voltage in ZnO–PbSe Quantum Dot Solar Cells by Understanding and Reducing Losses Arising from the ZnO Conduction Band Tail. Issue 8 (21st February 2014)

• Record Type: Journal Article
• Authors: Hoye, Robert L. Z.; Ehrler, Bruno; Böhm, Marcus L.; Muñoz‐Rojas, David; Altamimi, Rashid M.; Alyamani, Ahmed Y.; Vaynzof, Yana; Sadhanala, Aditya; Ercolano, Giorgio; Greenham, Neil C.; Friend, Richard H.; MacManus‐Driscoll, Judith L.; Musselman, Kevin P.
• Is Part Of: Advanced energy materials. Volume 4:Issue 8(2014:Aug.)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2014-02-21
• Subjects: Energy harvesting -- Materials -- Periodicals; Energy conversion -- Materials -- Periodicals; Energy storage -- Materials -- Periodicals; Photovoltaics -- Periodicals; Fuel cells -- Periodicals; Thermoelectric materials -- Periodicals; 621.31
• DOI: 10.1002/aenm.201301544
• Languages: English
• ISSNs: 1614-6832

Abstract

<abstract abstract-type="main" xml:lang="en"> <title> <x xml:space="preserve">Abstract</x> </title> <p>Colloidal quantum dot solar cells (CQDSCs) are attracting growing attention owing to significant improvements in efficiency. However, even the best depleted‐heterojunction CQDSCs currently display open‐circuit voltages (<italic>V</italic>_OCs) at least 0.5 V below the voltage corresponding to the bandgap. We find that the tail of states in the conduction band of the metal oxide layer can limit the achievable device efficiency. By continuously tuning the zinc oxide conduction band position via magnesium doping, we probe this critical loss pathway in ZnO–PbSe CQDSCs and optimize the energetic position of the tail of states, thereby increasing both the <italic>V</italic>_OC (from 408 mV to 608 mV) and the device efficiency.</p> </abstract>