Optical properties of armchair graphene nanoribbons under uniaxial strain. Issue 6 (22nd April 2014)

• Record Type: Journal Article
• Authors: Jia, Yonglei; Gao, Yang
• Is Part Of: Physica status solidi. Volume 251:Issue 6(2014:Jun.)
• Page Start: 1252
• Page End: 1256
• Publication Date: 2014-04-22
• Subjects: Solid state physics -- Periodicals; Solids -- Periodicals; Atomic structure -- Periodicals; 530.41
• DOI: 10.1002/pssb.201350423
• Languages: English
• ISSNs: 0370-1972

Abstract

<abstract abstract-type="main" xml:lang="en"> <title> <x xml:space="preserve">Abstract</x> </title> <sec id="pssb201350423-sec-0001" sec-type="section"> <p>The optical properties of armchair graphene nanoribbons (AGNRs) under the uniaxial strain are studied within a non‐orthogonal tight‐binding model. For 9‐AGNR and 10‐AGNR, the first transition energy <alternatives><inline-graphic mimetype="image" xlink:href="ark:/27927/pghgzchp0p" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /><mml:math altimg="urn:x-wiley:15213951:media:pssb201350423:pssb201350423-math-0001" display="inline" overflow="scroll" xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi>E</mml:mi><mml:mn>11</mml:mn></mml:msub></mml:math></alternatives> increases and the second one <alternatives><inline-graphic mimetype="image" xlink:href="ark:/27927/pghgzchpqj" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /><mml:math altimg="urn:x-wiley:15213951:media:pssb201350423:pssb201350423-math-0002" display="inline" overflow="scroll" xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi>E</mml:mi><mml:mn>22</mml:mn></mml:msub></mml:math></alternatives> decreases when the uniaxial strain increases. And for 10‐AGNR, there is a crossover for the two transition energies under the uniaxial strain. While for 11‐AGNR, the <alternatives><inline-graphic mimetype="image" xlink:href="ark:/27927/pghgzchpnh" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /><mml:math altimg="urn:x-wiley:15213951:media:pssb201350423:pssb201350423-math-0003" display="inline" overflow="scroll" xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi>E</mml:mi><mml:mn>11</mml:mn></mml:msub></mml:math></alternatives> transition energy decreases firstly and then increases and the <alternatives><inline-graphic mimetype="image" xlink:href="ark:/27927/pghgzchpw4" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /><mml:math altimg="urn:x-wiley:15213951:media:pssb201350423:pssb201350423-math-0004" display="inline" overflow="scroll" xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi>E</mml:mi><mml:mn>22</mml:mn></mml:msub></mml:math></alternatives> transition energy increases when the uniaxial strain increases. Interestingly, there is a semiconductor–metal transition for 11‐AGNR with increasing strain. These variations of the optical transition energies can be used as a supplemented tool to detect the deformation degree of an AGNR under the uniaxial strain.</p> </sec> </abstract>