Electrical field analysis of metal‐surface plasmon resonance using a biaxially strained Si substrate. (14th April 2014)

• Record Type: Journal Article
• Authors: Kosemura, Daisuke; Che Mohd Yusoff, Siti Norhidayah binti; Ogura, Atsushi
• Is Part Of: Journal of Raman spectroscopy. Volume 45:Number 6(2014:Jun.)
• Page Start: 414
• Page End: 417
• Publication Date: 2014-04-14
• Subjects: Raman spectroscopy -- Periodicals; 535.846
• DOI: 10.1002/jrs.4478
• Languages: English
• ISSNs: 0377-0486

Abstract

<abstract abstract-type="main"> <title> <x xml:space="preserve">Abstract</x> </title> <p>Electrical field components of metal‐surface plasmon resonance were analyzed in detail. Both longitudinal optical (LO) and transverse optical (TO) phonon modes of a biaxially strained Si layer can be excited by surface‐enhanced Raman spectroscopy (SERS). The <italic>z</italic> to <italic>y</italic> polarization ratio in SERS measurements was calculated to be 0.78 using the intensity ratio of TO to LO phonon modes. The electrical field components of SERS were also calculated by the finite‐difference time‐domain method. Copyright © 2014 John Wiley &amp; Sons, Ltd.</p> </abstract>