Ambipolar MoTe2 Transistors and Their Applications in Logic Circuits. (1st April 2014)

• Record Type: Journal Article
• Authors: Lin, Yen‐Fu; Xu, Yong; Wang, Sheng‐Tsung; Li, Song‐Lin; Yamamoto, Mahito; Aparecido‐Ferreira, Alex; Li, Wenwu; Sun, Huabin; Nakaharai, Shu; Jian, Wen‐Bin; Ueno, Keiji; Tsukagoshi, Kazuhito
• Is Part Of: Advanced materials. Volume 26:Number 20(2014)
• Page Start: 3263
• Page End: 3269
• Publication Date: 2014-04-01
• Subjects: Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201305845
• Languages: English
• ISSNs: 0935-9648

Abstract

<abstract abstract-type="graphical" xml:lang="en" id="adma201305845-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <bold>We report ambipolar charge transport in α‐molybdenum ditelluride (MoTe₂) flakes</bold>, whereby the temperature dependence of the electrical characteristics was systematically analyzed. The ambipolarity of the charge transport originated from the formation of Schottky barriers at the metal/MoTe₂ contacts. The Schottky barrier heights as well as the current on/off ratio could be modified by modulating the electrostatic fields of the back‐gate voltage (<italic>V</italic>_bg) and drain‐source voltage (<italic>V</italic>_ds). Using these ambipolar MoTe₂ transistors we fabricated complementary inverters and amplifiers, demonstrating their feasibility for future digital and analog circuit applications. <boxed-text content-type="graphic" position="anchor" orientation="portrait"><graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgh7z9cg4t" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></boxed-text></p> </abstract>