Growth of Highly (100)‐Oriented SrTiO3 Thin Films on Si(111) Substrates Without Buffer Layer. Issue 5 (1st April 2014)

• Record Type: Journal Article
• Authors: Panomsuwan, Gasidit; Takai, Osamu; Saito, Nagahiro; Brennecka, G. L.
• Is Part Of: Journal of the American Ceramic Society. Volume 97:Issue 5(2014)
• Page Start: 1383
• Page End: 1385
• Publication Date: 2014-04-01
• Subjects: Ceramics -- Periodicals; 620.1405
• DOI: 10.1111/jace.12912
• Languages: English
• ISSNs: 0002-7820

Abstract

<abstract abstract-type="main" id="jace12912-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p>The SrTiO₃ (STO) thin films were directly grown on Si(111) substrates without buffer layer by an electron‐cyclotron‐resonance ion beam sputter deposition. The growth temperature was varied from 700°C to 850°C, while other parameters were kept unchanged. X‐ray structural analysis demonstrates that the growth temperature has a strong influence in tuning degree of (100) orientation. The STO film grown at 800°C is found to be the highest degree of (100) orientation (98%) and a strong (100) fiber texture. For the surface morphology, the development of plate‐shaped grains reveals a good correlation with the change in the degree of (100) orientation. Moreover, the leakage current–voltage characteristics of the Au/STO/Si(111) metal‐insulator‐semiconductor capacitors are investigated and discussed in considerable detail.</p> </abstract>