Carbon Interlayer Between CVD SiC and SiO2 in High‐Temperature Passive Oxidation. Issue 5 (9th February 2014)

• Record Type: Journal Article
• Authors: Katsui, Hirokazu; Oguma, Miyuki; Goto, Takashi; Jacobson, N.
• Is Part Of: Journal of the American Ceramic Society. Volume 97:Issue 5(2014)
• Page Start: 1633
• Page End: 1637
• Publication Date: 2014-02-09
• Subjects: Ceramics -- Periodicals; 620.1405
• DOI: 10.1111/jace.12833
• Languages: English
• ISSNs: 0002-7820

Abstract

<abstract abstract-type="main" id="jace12833-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p>The oxidation behavior of high‐purity silicon carbide (SiC) prepared by chemical vapor deposition was investigated by thermogravimetry, transmission electron microscopy, and Raman spectroscopy in the temperature range 1534–1902 K in pure O₂. The carbon layer formed at the SiC/SiO₂ interface upon oxidation above 1784 K. Raman peaks corresponding to <italic>D</italic>‐ and <italic>G</italic>‐bands could be identified from the carbon layer. Bubbles were observed in the SiO₂ scale after the oxidation at 1873 K. This could be attributed to the accumulation of CO gas at the SiC/SiO₂ interface, resulting in the formation of the carbon layer and bubbles. These suggest that the oxidation rate of SiC is limited by the outward diffusion of CO in the SiO₂ scale in this temperature range.</p> </abstract>