Maximizing Integrated Optical and Electrical Properties of a Single ZnO Nanowire through Native Interfacial Doping. (22nd January 2014)

• Record Type: Journal Article
• Authors: Ding, Huaiyi; Pan, Nan; Ma, Chao; Wu, Yukun; Li, Junwen; Cai, Hongbing; Zhang, Kun; Zhang, Guanghui; Ren, Wenzhen; Li, Jianqi; Luo, Yi; Wang, Xiaoping; Hou, J. G.
• Is Part Of: Advanced materials. Volume 26:Number 19(2014)
• Page Start: 3035
• Page End: 3041
• Publication Date: 2014-01-22
• Subjects: Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201305340
• Languages: English
• ISSNs: 0935-9648

Abstract

<abstract abstract-type="graphical" xml:lang="en" id="adma201305340-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <bold>A native interfacial doping layer introduced in core–shell type ZnO</bold> nano­wires by a simple vapor phase re‐growth procedure endows the produced nano­wires with both excellent electrical and optical performances compared to conventional homogeneous ZnO nanowires. The unique Zn‐rich interfacial structure in the core–shell nanowires plays a crucial role in the outstanding performances. <boxed-text content-type="graphic" position="anchor" orientation="portrait"><graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgh2sww98m" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></boxed-text></p> </abstract>