Resistive switching characteristics of indium‐tin‐oxide thin film devices. Issue 5 (6th March 2014)

• Record Type: Journal Article
• Authors: Khiat, Ali; Salaoru, Iulia; Prodromakis, Themistoklis
• Is Part Of: Physica status solidi. Volume 211:Issue 5(2014:May)
• Page Start: 1194
• Page End: 1199
• Publication Date: 2014-03-06
• Subjects: Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.201330646
• Languages: English
• ISSNs: 1862-6300

Abstract

<abstract abstract-type="main"> <title> <x xml:space="preserve">Abstract</x> </title> <sec id="pssa201330646-sec-0001" sec-type="section"> <p>We demonstrate that indium tin oxide (ITO), when used as an active core material in metal–insulator–metal type devices, facilitates resistive switching. We fabricated devices both on silicon as well as quartz wafers, to demonstrate transparent devices. Furthermore, we investigated the influence of active core thickness on the devices' characteristics, showing that their switching threshold scales with the ITO thickness. Unipolar switching was observed for devices comprising thick ITO films while bipolar switching occurred for both thin and thick ITO films at the absence of high voltage forming steps. Our study demonstrates that ITO holds good potential for resistive memory applications.</p> </sec> </abstract>