P–I–N–P top‐emitting organic light‐emitting diodes with MoOx as the electrical and optical modification layers. Issue 5 (13th February 2014)

• Record Type: Journal Article
• Authors: Xie, Guohua; Fehse, Karsten; Leo, Karl; Gather, Malte C.
• Is Part Of: Physica status solidi. Volume 211:Issue 5(2014:May)
• Page Start: 1168
• Page End: 1174
• Publication Date: 2014-02-13
• Subjects: Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.201330527
• Languages: English
• ISSNs: 1862-6300

Abstract

<abstract abstract-type="main"> <title> <x xml:space="preserve">Abstract</x> </title> <sec id="pssa201330527-sec-0001" sec-type="section"> <p>We report a P–I–N–P top‐emitting organic light‐emitting diode (TEOLED) that contains an additional p‐doped hole transporting layer between the conventional n‐doped electron transporting layer and the top cathode. The TEOLED comprises MoO_{<italic>x</italic>} in different positions of the device stack (i) as a buffer layer and a p‐dopant to improve the hole injection efficiency from the anode side and to form an abrupt tunnel junction at the cathode side and (ii) a capping layer to tailor the out‐coupling efficiency. The N–P tunnel junction provides a simple approach for balancing charge injection and thus results in simultaneous improvements on current, power and external quantum efficiencies (maxima of 39, 35, and 45%, respectively).</p> </sec> </abstract>