Planar Hall effect of the Fe3Si epitaxial films with different in‐plane configurations on MgO substrates. Issue 4 (22nd November 2013)

• Record Type: Journal Article
• Authors: Guo, B. L.; Li, P.; Jin, C.; Liu, H.; Bai, H. L.
• Is Part Of: Physica status solidi. Volume 251:Issue 4(2014:Apr.)
• Page Start: 761
• Page End: 768
• Publication Date: 2013-11-22
• Subjects: Solid state physics -- Periodicals; Solids -- Periodicals; Atomic structure -- Periodicals; 530.41
• DOI: 10.1002/pssb.201349193
• Languages: English
• ISSNs: 0370-1972

Abstract

<abstract abstract-type="main" xml:lang="en"> <title> <x xml:space="preserve">Abstract</x> </title> <sec id="pssb201349193-sec-0001" sec-type="section"> <p>Fe₃Si films with (001), (112), and (011) <italic>c</italic>‐axis orientations were grown on MgO(001), (011), and (111) substrates by sputtering, respectively. The epitaxial relationship of the Fe₃Si films on MgO was verified by X‐ray diffractions (XRDs) with <italic>θ</italic>−2<italic>θ</italic> and <italic>ϕ</italic> scans. All the planar Hall resistance (PHR) curves of the Fe₃Si films with different orientations show a nearly sinusoidal behavior at high fields (<italic>H</italic> ≥ 100 Oe). When the magnetic field is below 100 Oe, the planar Hall effect (PHE) lineshapes of the Fe₃Si(001) and Fe₃Si(112) films deviate from the sin2<italic>θ</italic>_{<italic>M</italic>} function and show abrupt switching patterns. Meanwhile, the curves of PHE of the Fe₃Si(011) film show triangle shape. The PHE at high fields can be interpreted by single domain magnetic moments reversal models. The different low‐field PHEs in the Fe₃Si films were explained by multi‐domain magnetic properties and different in‐plane epitaxial configurations, which are closely correlated to the relation between the in‐plane symmetries of the films and substrates.</p> </sec> </abstract>