Silicon Nanocrystals: Direct Bandgap Silicon: Tensile‐Strained Silicon Nanocrystals (Adv. Mater. Interfaces 2/2014). Issue 2 (April 2014)

• Record Type: Journal Article
• Authors: Kůsová, Kateřina; Hapala, Prokop; Valenta, Jan; Jelínek, Pavel; Cibulka, Ondřej; Ondič, Lukáš; Pelant, Ivan
• Is Part Of: Advanced materials interfaces. Volume 1:Issue 2(2014)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2014-04
• Subjects: Materials science -- Periodicals; 620.11
• DOI: 10.1002/admi.201470008
• Languages: English
• ISSNs: 2196-7350

Abstract

<abstract abstract-type="graphical" xml:lang="en" id="admi201470008-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p>Methyl‐passivated silicon nanocrystals, such as the one in the foreground of the cover image, are capable of fast and efficient luminescence although their bulk counterpart is an indirect semiconductor. K. Kû sová and co‐workers show in article 1300042 that appropriately chosen surface capping tensilestrains the crystalline core and thus transforms this form of silicon into a material with a fundamental direct bandgap. <boxed-text content-type="graphic" position="anchor" orientation="portrait"><graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgg59w22j24" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></boxed-text></p> </abstract>