Charge Density Dependent Two‐Channel Conduction in Organic Electric Double Layer Transistors (EDLTs). (4th February 2014)

• Record Type: Journal Article
• Authors: Xie, Wei; Liu, Feilong; Shi, Sha; Ruden, P. Paul; Frisbie, C. Daniel
• Is Part Of: Advanced materials. Volume 26:Number 16(2014)
• Page Start: 2527
• Page End: 2532
• Publication Date: 2014-02-04
• Subjects: Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201304946
• Languages: English
• ISSNs: 0935-9648

Abstract

<abstract abstract-type="graphical" xml:lang="en" id="adma201304946-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <bold>A transport model based on hole‐density‐dependent trapping</bold> is proposed to explain the two unusual conductivity peaks at surface hole densities above 10¹³ cm⁻² in rubrene electric double layer transistors (EDLTs). Hole transport in rubrene is described to occur via multiple percolation pathways, where conduction is dominated by transport in the free‐site channel at low hole density, and in the trap‐site channel at larger hole density. <boxed-text content-type="graphic" position="anchor" orientation="portrait"><graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgg5bxsxp4k" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></boxed-text></p> </abstract>