Strain control in germanium nanowires: the use of a silicon nitride shell. Issue 4 (17th March 2014)

• Record Type: Journal Article
• Authors: Dupré, Ludovic; Buttard, Denis; Gentile, Pascal; Benoit à la Guillaume, Quentin; Gorisse, Thérèse; Renevier, Hubert
• Is Part Of: Physica status solidi. Volume 8:Issue 4(2014:Apr.)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2014-03-17
• Subjects: Solid state physics -- Periodicals; 530.4105
• DOI: 10.1002/pssr.201409050
• Languages: English
• ISSNs: 1862-6254

Abstract

<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <p>The core–shell geometry is a strong tool for inducing and controlling strains in nano‐objects in order to tune their optoelectronic properties. We synthesized and characterized core–shell nanostructures by depositing a non‐epitaxial silicon nitride shell around germanium nanowires. Scanning electron microscopy as well as energy dispersive X‐ray spectroscopy confirms the structural integrity of the heterostructures, and grazing incidence X‐ray diffraction measurements reveal the presence of a radial tensile strain in the Ge nanowires. A control of this strain is then demonstrated up to 0.3% by adjusting the SiN<italic>_x</italic> shell thickness versus Ge nanowire diameter. (© 2014 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim)</p> </abstract>