Facile Synthesis of [Cu(SCH3)]∞ Nanowires with High Charge Mobility. Issue 4 (4th February 2014)

• Record Type: Journal Article
• Authors: Zhang, Yuliang; Xia, Ting; Yu, Kin Man; Zhang, Fuhua; Yang, Heng; Liu, Boyang; An, Yan; Yin, Yansheng; Chen, Xiaobo
• Is Part Of: ChemPlusChem. Volume 79:Issue 4(2014:Apr.)
• Page Start: 559
• Page End: 563
• Publication Date: 2014-02-04
• Subjects: Chemistry -- Periodicals; 540.5
• DOI: 10.1002/cplu.201300415
• Languages: English
• ISSNs: 2192-6506

Abstract

<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <p>[Cu(SCH₃)]_∞ nanowires with lengths on the order of hundreds of micrometers were obtained with a facile method from the reaction of Cu(NO₃)₂⋅3 H₂O, dimethyl sulfoxide (DMSO), and water under hydrothermal conditions within a large range of DMSO/water ratios and at various temperatures. These highly crystalline, thermally stable (under vacuum) nanowires are p‐type conducting and have a hole mobility as high as 2 cm² V⁻¹ S⁻¹, which is 10²–10⁵ times higher than previously reported values. The high hole mobility may demonstrate their promising future in various electronic‐device applications.</p> </abstract>