Technology for III‐N heterogeneous mixed‐signal electronics. Issue 4 (25th February 2014)

• Record Type: Journal Article
• Authors: Chen, Kevin J.; Kwan, Alex Man Ho; Jiang, Qimeng
• Is Part Of: Physica status solidi. Volume 211:Issue 4(2014:Apr.)
• Page Start: 769
• Page End: 774
• Publication Date: 2014-02-25
• Subjects: Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.201300543
• Languages: English
• ISSNs: 1862-6300

Abstract

<abstract abstract-type="main"> <title> <x xml:space="preserve">Abstract</x> </title> <sec id="pssa201300543-sec-0001" sec-type="section"> <p>III‐N devices are suitable for high power RF/microwave amplifier, high temperature electronics, and power switches applications, and the peripheral mixed‐signal electronics with sensing, protection, and control functions could provide optimized performance, increased functionality, and enhanced reliability. This paper addresses the technology to discuss the technology options of implementing III‐N mixed‐signal circuits, and then reviews the recent progress in the expansion of design library, based on monolithically integrated enhancement/depletion (E/D)‐mode AlGaN/GaN HEMTs on GaN‐on‐silicon substrates. <inline-graphic xlink:href="ark:/27927/pgg55088tph" content-type="pssa201300543-gra-0001" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></p> <p>An integrated GaN proportional‐to‐absolute‐temperature (PTAT) voltage source.</p> </sec> </abstract>