Photoreflectance study of the temperature dependence of excitonic transitions in dilute GaAsN alloys. Issue 4 (19th March 2014)

• Record Type: Journal Article
• Authors: Okubo, Wataru; Yagi, Shuhei; Hijikata, Yasuto; Onabe, Kentaro; Yaguchi, Hiroyuki
• Is Part Of: Physica status solidi. Volume 211:Issue 4(2014:Apr.)
• Page Start: 752
• Page End: 755
• Publication Date: 2014-03-19
• Subjects: Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.201300462
• Languages: English
• ISSNs: 1862-6300

Abstract

<abstract abstract-type="main"> <title> <x xml:space="preserve">Abstract</x> </title> <sec id="pssa201300462-sec-0001" sec-type="section"> <p>We have studied the temperature dependence of optical transitions in dilute GaAsN alloys using photoreflectance (PR). A delocalized‐state transition is clearly observed in PR spectra while several localized‐state emission lines due to isoelectronic centers appear in photoluminescence spectra. The energy of optical transitions observed in PR spectra is in agreement with the excitonic transition energy in photoluminescence excitation spectra, clearly showing that the optical transitions in PR spectra are excitonic transitions. We analyzed the temperature dependence of the excitonic transition energies using the Bose–Einstein statistical expression, and found that even dilute alloys follow the same trend as GaAsN alloys with higher nitrogen concentrations. We discuss the coexistence of localized and delocalized states in dilute GaAsN alloys in terms of the random distribution of N atoms.</p> </sec> </abstract>