Solution‐Processed Small‐Molecule Bulk Heterojunction Ambipolar Transistors. (27th November 2013)

• Record Type: Journal Article
• Authors: Cheng, Shiau‐Shin; Huang, Peng‐Yi; Ramesh, Mohan; Chang, Hsiu‐Chieh; Chen, Li‐Ming; Yeh, Chia‐Ming; Fung, Chun‐Lin; Wu, Meng‐Chyi; Liu, Chung‐Chi; Kim, Choongik; Lin, Hong‐Cheu; Chen, Ming‐Chou; Chu, Chih‐Wei
• Is Part Of: Advanced functional materials. Volume 24:Number 14(2014)
• Page Start: 2057
• Page End: 2063
• Publication Date: 2013-11-27
• Subjects: Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adfm.201303378
• Languages: English
• ISSNs: 1616-301X

Abstract

<abstract abstract-type="main" xml:lang="en"> <title> <x xml:space="preserve">Abstract</x> </title> <p>Solution‐processed small‐molecule bulk heterojunction (BHJ) ambipolar organic thin‐film transistors are fabricated based on a combination of [2‐phenylbenzo[<italic>d</italic>, <italic>d</italic>']thieno[3, 2‐<italic>b</italic>;4, 5‐<italic>b</italic>']dithiophene (P‐BTDT) : 2‐(4‐<italic>n</italic>‐octylphenyl)benzo[<italic>d</italic>, <italic><underline>d</underline></italic>']thieno[3, 2‐<italic>b</italic>;4, 5‐<italic>b</italic>']dithiophene (OP‐BTDT)] and C₆₀. Treating high electrical performance vacuum‐deposited P‐BTDT organic semiconductors with a newly developed solution‐processed organic semiconductor material, OP‐BTDT, in an optimized ratio yields a solution‐processed <italic>p</italic>‐channel organic semiconductor blend with carrier mobility as high as 0.65 cm² V⁻¹ s⁻¹. An optimized blending of P‐BTDT:OP‐BTDT with the <italic>n</italic>‐channel semiconductor, C₆₀, results in a BHJ ambipolar transistor with balanced carrier mobilities for holes and electrons of 0.03 and 0.02 cm² V⁻¹ s⁻¹, respectively. Furthermore, a complementary‐like inverter composed of two ambipolar thin‐film transistors is demonstrated, which achieves a gain of 115.</p> </abstract>