Two‐Dimensional Si Nanosheets with Local Hexagonal Structure on a MoS2 Surface. (17th December 2013)

• Record Type: Journal Article
• Authors: Chiappe, Daniele; Scalise, Emilio; Cinquanta, Eugenio; Grazianetti, Carlo; van den Broek, Bas; Fanciulli, Marco; Houssa, Michel; Molle, Alessandro
• Is Part Of: Advanced materials. Volume 26:Number 13(2014)
• Page Start: 2096
• Page End: 2101
• Publication Date: 2013-12-17
• Subjects: Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201304783
• Languages: English
• ISSNs: 0935-9648

Abstract

<abstract abstract-type="graphical" xml:lang="en" id="adma201304783-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <bold>The structural and electronic properties of a Si nanosheet (NS)</bold> grown onto a MoS₂ substrate by means of molecular beam epitaxy are assessed. Epitaxially grown Si is shown to adapt to the trigonal prismatic surface lattice of MoS₂ by forming two‐dimensional nanodomains. The Si layer structure is distinguished from the underlying MoS₂ surface structure. The local electronic properties of the Si nanosheet are dictated by the atomistic arrangement of the layer and unlike the MoS₂ hosting substrate they are qualified by a gap‐less density of states. <boxed-text content-type="graphic" position="anchor" orientation="portrait"><graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgg52wtn3xm" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></boxed-text></p> </abstract>