Reliability of high‐resolution electron backscatter diffraction determination of strain and rotation variations using phase‐only and cross correlation. Issue 4 (19th February 2014)

• Record Type: Journal Article
• Authors: Riedl, T.; Wendrock, H.
• Is Part Of: Crystal research and technology. Volume 49:Issue 4(2014:Apr.)
• Page Start: 195
• Page End: 203
• Publication Date: 2014-02-19
• Subjects: Crystallography -- Periodicals; 548
• DOI: 10.1002/crat.201300217
• Languages: English
• ISSNs: 0232-1300

Abstract

<abstract abstract-type="graphical" xml:lang="en" id="crat201300217-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p>Electron backscatter diffraction (EBSD) patterns allow to determine small strain and rotation variations in crystalline materials. For both rotation and three‐point bending of a monocrystalline silicon sample the reliability of elastic distortion analysis by means of cross‐ as well as phase‐only correlation of EBSD regions of interest (ROIs) is examined. It is shown that in contrast to the degree of ROI overlap the applied Fourier filter width exhibits a major impact on the displacement gradient results. Most importantly, the cross‐correlation variant yields a higher robustness against noise in the EBSD patterns than phase‐only correlation. <boxed-text content-type="graphic" position="anchor" orientation="portrait"><graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgg537jftrr" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></boxed-text></p> </abstract>