ZnSe‐Based Longitudinal Twinning Nanowires1. Issue 4 (20th January 2014)

• Record Type: Journal Article
• Authors: Xu, Jing; Lu, Aijiang; Wang, Chunrui; Zou, Rujia; Liu, Xiaoyun; Wu, Xing; Wang, Yuxi; Li, Sijia; Sun, Litao; Chen, Xiaoshuang; Oh, Hongseok; Baek, Hyeonjun; Yi, Gyu‐Chul; Chu, Junhao
• Is Part Of: Advanced engineering materials. Volume 16:Issue 4(2014:Apr.)
• Page Start: 459
• Page End: 465
• Publication Date: 2014-01-20
• Subjects: Materials -- Periodicals; 620.11
• DOI: 10.1002/adem.201300405
• Languages: English
• ISSNs: 1438-1656

Abstract

<abstract abstract-type="main" xml:lang="en"> <title> <x xml:space="preserve">Abstract</x> </title> <sec id="adem201300405-sec-0001" sec-type="section"> <p> <italic>Zinc blende ZnSe longitudinal twinning nanowires and a sandwich structure with the wurtzite ZnSe inserting into the zinc blende ZnSe longitudinal twinning nanowires are fabricated via a simple thermal evaporation method. The high‐resolution transmission electron microscope images of the two types of nanowires match well with simulated atomic models of them. The growth of them might be caused by the crystal plane slip during the phase transformation process between the wurtzite and the zinc blende ZnSe nanowire. The vibrating and luminescence properties of the as‐grown longitudinal twinning nanowire are investigated by room‐temperature Raman and low‐temperature (10 K) photoluminescence spectroscopy, respectively. The electrical transport properties of the two types of longitudinal twinning ZnSe nanowires and the monocrystal ZnSe nanowires were compared using in situ measurement in transmission electron microscope</italic>.</p> </sec> </abstract>