3D‐Transistor Array Based on Horizontally Suspended Silicon Nano‐bridges Grown via a Bottom‐Up Technique. (30th January 2014) - Oh, Jin Yong
Abstract Integrated surround‐gate field‐effect‐transistors enabled by bottom‐up synthesis of nano‐bridges are demonstrated. Horizontally oriented silicon nano‐bridge devices are fabricated avoiding the rigorous processes for aligning and contacting nanowires grown via a bottom‐up technique. Evaluation of electrical properties and a memory device application of the transistors are presented.