High‐Speed Preparation of <111>‐ and <110>‐Oriented β‐SiC Films by Laser Chemical Vapor Deposition. Issue 3 (14th December 2013)

• Record Type: Journal Article
• Authors: Zhang, Song; Xu, Qingfang; Tu, Rong; Goto, Takashi; Zhang, Lianmeng; Besmann, T.
• Is Part Of: Journal of the American Ceramic Society. Volume 97:Issue 3(2014)
• Page Start: 952
• Page End: 958
• Publication Date: 2013-12-14
• Subjects: Ceramics -- Periodicals; 620.1405
• DOI: 10.1111/jace.12706
• Languages: English
• ISSNs: 0002-7820

Abstract

&lt;abstract abstract-type=&quot;main&quot; id=&quot;jace12706-abs-0001&quot;&gt; &lt;title&gt; &lt;x xml:space=&quot;preserve&quot;&gt;Abstract&lt;/x&gt; &lt;/title&gt; &lt;p&gt;Highly oriented &amp;lt;111&amp;gt; and &amp;lt;110&amp;gt; β‐SiC films were prepared on Si(100) single crystal substrates by laser chemical vapor deposition using a diode laser (wavelength = 808 nm) and HMDS (Si(CH&lt;sub&gt;3&lt;/sub&gt;)&lt;sub&gt;3&lt;/sub&gt;–Si(CH&lt;sub&gt;3&lt;/sub&gt;)&lt;sub&gt;3&lt;/sub&gt;) as a precursor. The effects of laser power (&lt;italic&gt;P&lt;/italic&gt;&lt;sub&gt;L&lt;/sub&gt;), total pressure (&lt;italic&gt;P&lt;/italic&gt;&lt;sub&gt;tot&lt;/sub&gt;), and deposition temperature (&lt;italic&gt;T&lt;/italic&gt;&lt;sub&gt;dep&lt;/sub&gt;) on the orientation, microstructure, and deposition rate (&lt;italic&gt;R&lt;/italic&gt;&lt;sub&gt;dep&lt;/sub&gt;) were investigated. The orientation of the β‐SiC films changed from &amp;lt;111&amp;gt; to random to &amp;lt;110&amp;gt; with increasing &lt;italic&gt;P&lt;/italic&gt;&lt;sub&gt;L&lt;/sub&gt; and &lt;italic&gt;P&lt;/italic&gt;&lt;sub&gt;tot&lt;/sub&gt;. The &amp;lt;111&amp;gt;‐, randomly, and &amp;lt;110&amp;gt;‐oriented β‐SiC films exhibited dense, cauliflower‐like, and cone‐like microstructures, respectively. Stacking faults were observed in the &amp;lt;111&amp;gt;‐ and &amp;lt;110&amp;gt;‐oriented films, and aligned parallel to the (111) plane in the &amp;lt;111&amp;gt;‐oriented film, whereas they were perpendicular to the (110) plane in the &amp;lt;110&amp;gt;‐oriented film. The highest &lt;italic&gt;R&lt;/italic&gt;&lt;sub&gt;dep&lt;/sub&gt; of the &amp;lt;111&amp;gt;‐oriented β‐SiC film was 200 μm/h at &lt;italic&gt;P&lt;/italic&gt;&lt;sub&gt;tot&lt;/sub&gt; = 200 Pa and &lt;italic&gt;T&lt;/italic&gt;&lt;sub&gt;dep&lt;/sub&gt; = 1420 K, whereas that of the &amp;lt;110&amp;gt;‐oriented film was 3600 μm/h at &lt;italic&gt;P&lt;/italic&gt;&lt;sub&gt;tot&lt;/sub&gt; = 600 Pa and &lt;italic&gt;T&lt;/italic&gt;&lt;sub&gt;dep&lt;/sub&gt; = 1605 K.&lt;/p&gt; &lt;/abstract&gt;