Organic Transistors: 25th Anniversary Article: Microstructure Dependent Bias Stability of Organic Transistors (Adv. Mater. 11/2014). (March 2014)

• Record Type: Journal Article
• Authors: Lee, Wi Hyoung; Choi, Hyun Ho; Kim, Do Hwan; Cho, Kilwon
• Is Part Of: Advanced materials. Volume 26:Number 11(2014)
• Page Start: 1634
• Page End: 1634
• Publication Date: 2014-03
• Subjects: Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201470069
• Languages: English
• ISSNs: 0935-9648

Abstract

<abstract abstract-type="graphical" xml:lang="en" id="adma201470069-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p>Recent studies of the bias‐stress‐driven electrical instability of organic field‐effect transistors are reviewed by K. Cho, D. H. Kim, and co‐workers on page 1660. The principles underlying the bias instability are discussed, particularly the mechanisms of charge trapping. The charge‐trapping phenomena in the semiconductor, the dielectric, and the semiconductor‐dielectric interface are analyzed with special attention to the microstructural dependence of bias instability. <boxed-text content-type="graphic" position="anchor" orientation="portrait"><graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgg4sr6ppjq" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></boxed-text></p> </abstract>