Room Temperature Formation of High‐Mobility Two‐Dimensional Electron Gases at Crystalline Complex Oxide Interfaces. (12th December 2013)

• Record Type: Journal Article
• Authors: Chen, Y. Z.; Bovet, N.; Kasama, T.; Gao, W. W.; Yazdi, S.; Ma, C.; Pryds, N.; Linderoth, S.
• Is Part Of: Advanced materials. Volume 26:Number 9(2014)
• Page Start: 1462
• Page End: 1467
• Publication Date: 2013-12-12
• Subjects: Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201304634
• Languages: English
• ISSNs: 0935-9648

Abstract

<abstract abstract-type="graphical" xml:lang="en" id="adma201304634-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <bold>Well‐controlled sub‐unit‐cell layer‐bylayer epitaxial growth</bold> of spinel alumina is achieved at room temperature on a TiO₂‐terminated SrTiO₃ single‐crystalline substrate. By tailoring the interface redox reaction, 2D electron gases with mobilities exceeding 3000 cm 2 V⁻¹ s⁻¹ are achieved at this novel oxide interface. <boxed-text content-type="graphic" position="anchor" orientation="portrait"><graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgg4sr5z3kw" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></boxed-text></p> </abstract>