2‐Dimensional Transition Metal Dichalcogenides with Tunable Direct Band Gaps: MoS2(1–x)Se2x Monolayers. (12th December 2013)

• Record Type: Journal Article
• Authors: Mann, John; Ma, Quan; Odenthal, Patrick M.; Isarraraz, Miguel; Le, Duy; Preciado, Edwin; Barroso, David; Yamaguchi, Koichi; von Son Palacio, Gretel; Nguyen, Andrew; Tran, Tai; Wurch, Michelle; Nguyen, Ariana; Klee, Velveth; Bobek, Sarah; Sun, Dezheng; Heinz, Tony. F.; Rahman, Talat S.; Kawakami, Roland; Bartels, Ludwig
• Is Part Of: Advanced materials. Volume 26:Number 9(2014)
• Page Start: 1399
• Page End: 1404
• Publication Date: 2013-12-12
• Subjects: Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201304389
• Languages: English
• ISSNs: 0935-9648

Abstract

<abstract abstract-type="graphical" xml:lang="en" id="adma201304389-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <bold>MoS_2(1−x) Se_2x single‐layer films</bold> are prepared using a mixture of organic selenium and sulfur precursors as well as a solid molybdenum source. The direct bandgaps are found to scale nearly linearly with composition in the range of 1.87 eV (pure single‐layer MoS₂) to 1.55 eV (pure single‐layer MoSe₂) permitting straightforward bandgap engineering. <boxed-text content-type="graphic" position="anchor" orientation="portrait"><graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgg4sr5z7wx" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></boxed-text></p> </abstract>