Fabrication of Ordered, Large Scale, Horizontally‐Aligned Si Nanowire Arrays Based on an In Situ Hard Mask Block Copolymer Approach. (26th November 2013)

• Record Type: Journal Article
• Authors: Ghoshal, Tandra; Senthamaraikannan, Ramsankar; Shaw, Matthew T.; Holmes, Justin D.; Morris, Michael A.
• Is Part Of: Advanced materials. Volume 26:Number 8(2014)
• Page Start: 1207
• Page End: 1216
• Publication Date: 2013-11-26
• Subjects: Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201304096
• Languages: English
• ISSNs: 0935-9648

Abstract

<abstract abstract-type="graphical" xml:lang="en" id="adma201304096-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <bold>A simple technique is demonstrated</bold> to fabricate horizontal, uniform, and hexagonally arranged Sinanowire arrays with controlled orientation and density at spatially well defined locations on a substrate based on an in situ hard‐mask pattern‐formation approach by microphase‐separated block‐copolymer thin films. The technique may have significant application in the manufacture of transistor circuitry. <boxed-text content-type="graphic" position="anchor" orientation="portrait"><graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgg4sr64hn2" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></boxed-text></p> </abstract>