Hexacarbonyl (Trimethylsilyl Ethyne) Dicobalt as MOCVD Precursor for Thin Cobalt Layer Formation1. Issue 14 (15th August 2013)

• Record Type: Journal Article
• Authors: Georgi, Colin; Hildebrandt, Alexander; Tuchscherer, André; Oswald, Steffen; Lang, Heinrich
• Is Part Of: Zeitschrift für anorganische und allgemeine Chemie. Volume 639:Issue 14(2013)
• Page Start: 2532
• Page End: 2535
• Publication Date: 2013-08-15
• Subjects: Chemistry, Inorganic -- Periodicals; Chemistry -- Periodicals; 540
• DOI: 10.1002/zaac.201300292
• Languages: English
• ISSNs: 0044-2313

Abstract

<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <p>The low melting Co⁰ source [Co₂(CO)₆(η²‐Me₃SiC≡CH)] (<bold>3</bold>) was prepared as a precursor system for the metal‐organic chemical vapor deposition (MOCVD) of cobalt. The synthesis of <bold>3</bold> was realized by the reaction of trimethylsilyl acetylene (<bold>2</bold>) with dicobalt octacarbonyl (<bold>1</bold>) in <italic>n</italic>‐hexane at ambient temperature. Vapor pressure measurements and TG‐MS analysis were performed revealing the suitability of <bold>3</bold> in the CVD process. Cobalt layers formed in a vertical cold wall CVD reactor were characterized by SEM, EDX, and XPS. The appropriate metallic films consist of a mixture of cobalt and cobalt oxide.</p> </abstract>