Defects: Understanding Bulk Defects in Topological Insulators from Nuclear‐Spin Interactions (Adv. Funct. Mater. 11/2014). (March 2014)

• Record Type: Journal Article
• Authors: Koumoulis, Dimitrios; Leung, Belinda; Chasapis, Thomas C.; Taylor, Robert; King, Daniel; Kanatzidis, Mercouri G.; Bouchard, Louis‐S.
• Is Part Of: Advanced functional materials. Volume 24:Number 11(2014)
• Page Start: 1648
• Page End: 1648
• Publication Date: 2014-03
• Subjects: Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adfm.201470073
• Languages: English
• ISSNs: 1616-301X

Abstract

<abstract abstract-type="graphical" xml:lang="en" id="adfm201470073-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p>Beneath the surface of a topological insulator is the bulk region (represented by its band structure), whose conductance should be kept minimal. New reproducible tools are needed which do not interfere with the surface states. Such non‐invasive measurements of the bulk electronic properties can be provided by NMR spectroscopy, as shown by L.‐S. Bouchard and co‐workers on page 1519, which probes the resonant coupling of nuclear spins to the electrons near the Fermi level. Cover credit goes to Charlotte Gomez. <boxed-text content-type="graphic" position="anchor" orientation="portrait"><graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgg4sr54r9q" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></boxed-text></p> </abstract>