Nanoribbon Devices: p‐Type Beta‐Silver Vanadate Nanoribbons for Nanoelectronic Devices with Tunable Electrical Properties (Adv. Funct. Mater. 41/2013). (4th November 2013)

• Record Type: Journal Article
• Authors: Feng, Mei; Luo, Lin‐Bao; Nie, Biao; Yu, Shu‐Hong
• Is Part Of: Advanced functional materials. Volume 23:Number 41(2013)
• Page Start: 5102
• Page End: 5102
• Publication Date: 2013-11-04
• Subjects: Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adfm.201370209
• Languages: English
• ISSNs: 1616-301X

Abstract

<abstract abstract-type="graphical" xml:lang="en"> <title> <x xml:space="preserve">Abstract</x> </title> <p>Two basic building blocks including nano‐fieldeffect transistors (nano‐FETs) and nano‐Schottky barrier diodes (nano‐SBDs) are constructed by S.‐H. Yu and co‐workers, indicating the great potential of β‐AgVO₃ nanoribbons for application in nanoelectronic devices. <ext-link ext-link-type="doi" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink">On page 5116</ext-link>, the diameter of the bridging nanoribbons and their numbers are tailored, and the surfaces are modified through light‐irradiating the backbones of the nanoribbons. <boxed-text content-type="graphic" position="anchor" orientation="portrait"><graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgg4t6qgsf6" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></boxed-text></p> </abstract>