Solution Processed Tungsten Oxide Interfacial Layer for Efficient Hole‐Injection in Quantum Dot Light‐Emitting Diodes. Issue 2 (5th August 2013)

• Record Type: Journal Article
• Authors: Yang, Xuyong; Mutlugun, Evren; Zhao, Yongbiao; Gao, Yuan; Leck, Kheng Swee; Ma, Yanyan; Ke, Lin; Tan, Swee Tiam; Demir, Hilmi Volkan; Sun, Xiao Wei
• Is Part Of: Small. Volume 10:Issue 2(2014:Jan.)
• Page Start: 247
• Page End: 252
• Publication Date: 2013-08-05
• Subjects: Nanotechnology -- Periodicals; Nanoparticles -- Periodicals; Microtechnology -- Periodicals; 620.5
• DOI: 10.1002/smll.201301199
• Languages: English
• ISSNs: 1613-6810

Abstract

<abstract abstract-type="graphical" xml:lang="en" id="smll201301199-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <bold>A highly efficient and stable QLED using an inorganic WO₃ nanoparticle</bold> film as a hole injection layer is demonstrated.The resulting WO₃ nanoparticle‐based QLEDs also exhibit superior performance compared to that of the present PEDOT:PSS‐based QLEDs. The results indicate that WO₃ nanoparticles are promising solution‐processed buffer layer materials and serve as a strong candidate for QLED technology towards the practical applications in the next‐generation lighting and displays. <boxed-text content-type="graphic" position="anchor" orientation="portrait"><graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgg4sqp7z15" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></boxed-text></p> </abstract>