In Situ Electron Microscopy Four‐Point Electromechanical Characterization of Freestanding Metallic and Semiconducting Nanowires. Issue 4 (24th September 2013)

• Record Type: Journal Article
• Authors: Bernal, Rodrigo A.; Filleter, Tobin; Connell, Justin G.; Sohn, Kwonnam; Huang, Jiaxing; Lauhon, Lincoln J.; Espinosa, Horacio D.
• Is Part Of: Small. Volume 10:Issue 4(2014:Feb.)
• Page Start: 725
• Page End: 733
• Publication Date: 2013-09-24
• Subjects: Nanotechnology -- Periodicals; Nanoparticles -- Periodicals; Microtechnology -- Periodicals; 620.5
• DOI: 10.1002/smll.201300736
• Languages: English
• ISSNs: 1613-6810

Abstract

<abstract abstract-type="main" xml:lang="en"> <title> <x xml:space="preserve">Abstract</x> </title> <p>Electromechanical coupling is a topic of current interest in nanostructures, such as metallic and semiconducting nanowires, for a variety of electronic and energy applications. As a result, the determination of structure‐property relations that dictate the electromechanical coupling requires the development of experimental tools to perform accurate metrology. Here, a novel micro‐electro‐mechanical system (MEMS) that allows integrated four‐point, uniaxial, electromechanical measurements of freestanding nanostructures in‐situ electron microscopy, is reported. Coupled mechanical and electrical measurements are carried out for penta‐twinned silver nanowires, their resistance is identified as a function of strain, and it is shown that resistance variations are the result of nanowire dimensional changes. Furthermore, in situ SEM piezoresistive measurements on n‐type, [111]‐oriented silicon nanowires up to unprecedented levels of ∼7% strain are demonstrated. The piezoresistance coefficients are found to be similar to bulk values. For both metallic and semiconducting nanowires, variations of the contact resistance as strain is applied are observed. These variations must be considered in the interpretation of future two‐point electromechanical measurements.</p> </abstract>