Dissolvable Metals for Transient Electronics. (25th September 2013)

• Record Type: Journal Article
• Authors: Yin, Lan; Cheng, Huanyu; Mao, Shimin; Haasch, Richard; Liu, Yuhao; Xie, Xu; Hwang, Suk‐Won; Jain, Harshvardhan; Kang, Seung‐Kyun; Su, Yewang; Li, Rui; Huang, Yonggang; Rogers, John A.
• Is Part Of: Advanced functional materials. Volume 24:Number 5(2014)
• Page Start: 645
• Page End: 658
• Publication Date: 2013-09-25
• Subjects: Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adfm.201301847
• Languages: English
• ISSNs: 1616-301X

Abstract

<abstract abstract-type="main" xml:lang="en"> <title> <x xml:space="preserve">Abstract</x> </title> <p>Reactive dissolution and its effects on electrical conduction, morphological change and chemical transformation in thin films of Mg, AZ31B Mg alloy, Zn, Fe, W, and Mo in de‐ionized (DI) water and simulated body fluids (Hanks' solution pH 5–8) are systematically studied, to assess the potential for use of these metals in water‐soluble, that is, physically "transient", electronics. The results indicate that the electrical dissolution rates in thin films can be much different that traditionally reported corrosion rates in corresponding bulk materials. Silicon metal oxide field effect transistors (MOSFETs) built with these metals demonstrate feasibility for use in transient electronics.</p> </abstract>