Back Cover: Wavy channel thin film transistor architecture for area efficient, high performance and low power displays (Phys. Status Solidi RRL 3/2014). Issue 3 (March 2014)
- Record Type:
- Journal Article
- Title:
- Back Cover: Wavy channel thin film transistor architecture for area efficient, high performance and low power displays (Phys. Status Solidi RRL 3/2014). Issue 3 (March 2014)
- Main Title:
- Back Cover: Wavy channel thin film transistor architecture for area efficient, high performance and low power displays (Phys. Status Solidi RRL 3/2014)
- Authors:
- Hanna, Amir N.
Torres Sevilla, Galo A.
Ghoneim, Mohamed T.
Hussain, Aftab M.
Bahabry, Rabab R.
Syed, Ahad
Hussain, Muhammad M. - Abstract:
- <abstract abstract-type="graphical" xml:lang="en"> <title> <x xml:space="preserve">Abstract</x> </title> <p>As shown by Hanna et al. (pp. <ext-link ext-link-type="doi" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink">248–251</ext-link>), by generating a wavy architecture in classical transistor topology, high output current is achieved – opening up bold futuristic opportunity for ultra‐high resolution bright display. Irrespective of the material choice – the unique architecture can provide exciting thin film transistor performance enhancement.Hanna et al. demonstrate the advantage of using the wavy architecture in terms of area efficiency, higher output current, higher field‐effect mobility and similar OFF current levels and <italic>I</italic><sub>on</sub>/<italic>I</italic><sub>off</sub> ratios compared to the planar counterparts for a thin film transistor fabricated with zinc oxide channel material. The low OFF current levels and high <italic>I</italic><sub>on</sub>/<italic>I</italic><sub>off</sub> ratios for the wavy‐channel devices ensure that standby power consumption remains similar to the planar counterparts, while improving the ON current values. This proves the significance of this new architecture for large‐area high‐resolution display applications.</p> <p> <boxed-text content-type="graphic" position="anchor" orientation="portrait"> <graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgg4sxz8f2h" orientation="portrait"<abstract abstract-type="graphical" xml:lang="en"> <title> <x xml:space="preserve">Abstract</x> </title> <p>As shown by Hanna et al. (pp. <ext-link ext-link-type="doi" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink">248–251</ext-link>), by generating a wavy architecture in classical transistor topology, high output current is achieved – opening up bold futuristic opportunity for ultra‐high resolution bright display. Irrespective of the material choice – the unique architecture can provide exciting thin film transistor performance enhancement.Hanna et al. demonstrate the advantage of using the wavy architecture in terms of area efficiency, higher output current, higher field‐effect mobility and similar OFF current levels and <italic>I</italic><sub>on</sub>/<italic>I</italic><sub>off</sub> ratios compared to the planar counterparts for a thin film transistor fabricated with zinc oxide channel material. The low OFF current levels and high <italic>I</italic><sub>on</sub>/<italic>I</italic><sub>off</sub> ratios for the wavy‐channel devices ensure that standby power consumption remains similar to the planar counterparts, while improving the ON current values. This proves the significance of this new architecture for large‐area high‐resolution display applications.</p> <p> <boxed-text content-type="graphic" position="anchor" orientation="portrait"> <graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgg4sxz8f2h" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /> </boxed-text> </p> </abstract> … (more)
- Is Part Of:
- Physica status solidi. Volume 8:Issue 3(2014:Mar.)
- Journal:
- Physica status solidi
- Issue:
- Volume 8:Issue 3(2014:Mar.)
- Issue Display:
- Volume 8, Issue 3 (2014)
- Year:
- 2014
- Volume:
- 8
- Issue:
- 3
- Issue Sort Value:
- 2014-0008-0003-0000
- Page Start:
- n/a
- Page End:
- n/a
- Publication Date:
- 2014-03
- Subjects:
- Solid state physics -- Periodicals
530.4105 - Journal URLs:
- http://www3.interscience.wiley.com/cgi-bin/jhome/112716025 ↗
http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)1862-6270 ↗
http://onlinelibrary.wiley.com/ ↗ - DOI:
- 10.1002/pssr.201470515 ↗
- Languages:
- English
- ISSNs:
- 1862-6254
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 6475.235500
British Library DSC - BLDSS-3PM
British Library HMNTS - ELD Digital store - Ingest File:
- 3050.xml