Effect of nitrogen doping on the thermal conductivity of GeTe thin films. Issue 12 (6th September 2013)

• Record Type: Journal Article
• Authors: Fallica, Roberto; Varesi, Enrico; Fumagalli, Luca; Spadoni, Simona; Longo, Massimo; Wiemer, Claudia
• Is Part Of: Physica status solidi. Volume 7:Issue 12(2013:Dec.)
• Page Start: 1107
• Page End: 1111
• Publication Date: 2013-09-06
• Subjects: Solid state physics -- Periodicals; 530.4105
• DOI: 10.1002/pssr.201308026
• Languages: English
• ISSNs: 1862-6254

Abstract

<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <p>The 3<italic>ω</italic> method was employed to determine the effect of nitrogen doping (5 at.%) on the thermal conductivity of sputtered thin films of stoichiometric GeTe (a material of interest for phase change memories). It was found that nitrogen doping has a detrimental effect on the thermal conductivity of GeTe in both phases, but less markedly in the amorphous (–25%) than in the crystalline one (–40%). On the opposite, no effect could be detected on the measured thermal boundary resistance between these films and SiO₂, within the experimental error. Our results agree with those obtained by molecular dynamic simulation of amorphous GeTe. (© 2013 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim)</p> </abstract>