A RHEED investigation of self‐assembled GaN nanowire nucleation dynamics on bare Si and on Si covered with a thin AlN buffer layer. Issue 10 (5th July 2013)

• Record Type: Journal Article
• Authors: Hestroffer, Karine; Daudin, Bruno
• Is Part Of: Physica status solidi. Volume 7:Issue 10(2013:Oct.)
• Page Start: 835
• Page End: 839
• Publication Date: 2013-07-05
• Subjects: Solid state physics -- Periodicals; 530.4105
• DOI: 10.1002/pssr.201307255
• Languages: English
• ISSNs: 1862-6254

Abstract

<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <p> <boxed-text content-type="graphic" position="anchor" orientation="portrait"> <graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgg4t6pj306" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /> </boxed-text> </p> <p>Based on reflection high energy electron diffraction (RHEED) experiments, we show that the nucleation delay of GaN nanowire growth by plasma‐assisted molecular beam epitaxy on nitrided Si(111) and on AlN/Si(111) exhibit similar behaviors in function of the substrate temperature and of the Ga flux. On bare Si(111), a finite delay, estimated to be one minute in our system and under our set of growth conditions, is necessary to form and subsequently amorphize crystalline β‐Si₃N₄ before GaN can start to form. Although the amorphization time is found to be independent of the substrate temperature, this process adds a supplemental delay within the overall delay in the growth of GaN nanowires on bare Si(111), compared to growth on AlN/Si(111) or on amorphous silicon nitride on Si(111). (© 2013 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim)</p> </abstract>