Quantum efficiency of InAs/InP nanowire heterostructures grown on silicon substrates. Issue 10 (8th July 2013)

• Record Type: Journal Article
• Authors: Anufriev, Roman; Chauvin, Nicolas; Khmissi, Hammadi; Naji, Khalid; Patriarche, Gilles; Gendry, Michel; Bru‐Chevallier, Catherine
• Is Part Of: Physica status solidi. Volume 7:Issue 10(2013:Oct.)
• Page Start: 878
• Page End: 881
• Publication Date: 2013-07-08
• Subjects: Solid state physics -- Periodicals; 530.4105
• DOI: 10.1002/pssr.201307242
• Languages: English
• ISSNs: 1862-6254

Abstract

<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <p> <boxed-text content-type="graphic" position="anchor" orientation="portrait"> <graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgg4t6pjtsr" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /> </boxed-text> </p> <p>Photoluminescence (PL) quantum efficiency (QE) is experimentally investigated, using an integrating sphere, as a function of excitation power on both InAs/InP quantum rod nanowires (QRod‐NWs) and radial quantum well nanowires (QWell‐NWs) grown on silicon substrates. The measured values of the QE are compared with those of the planar analogues such as quantum dash and quantum well samples, and found to be comparable for the quantum well structures at relatively low power density. Further studies reveal that the values of QE of the QRod‐NWs and QWell‐NWs are limited by the low quality of the InP NW structure and the quality of radial quantum well, respectively. (© 2013 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim)</p> </abstract>