Cite
HARVARD Citation
Barone, P. et al. (n.d.). Strain engineering of topological properties in lead‐salt semiconductors. Physica status solidi. 7 (12), pp. 1102-1106. [Online].
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Barone, P. et al. (n.d.). Strain engineering of topological properties in lead‐salt semiconductors. Physica status solidi. 7 (12), pp. 1102-1106. [Online].