Simulation of multilevel polarization in ferroelectric tunnel junctions. Issue 2 (18th October 2013)

• Record Type: Journal Article
• Authors: Li, J. Q.; Xiong, Y.; Tang, M. H.; Guo, H. X.; Zhao, W.; Xiao, Y. G.; Tang, Z. H.; Yan, S. A.; Zhang, W. L.; Zhou, Y. C.; Yang, F.; He, J.
• Is Part Of: Physica status solidi. Volume 251:Issue 2(2014:Feb.)
• Page Start: 469
• Page End: 473
• Publication Date: 2013-10-18
• Subjects: Solid state physics -- Periodicals; Solids -- Periodicals; Atomic structure -- Periodicals; 530.41
• DOI: 10.1002/pssb.201349222
• Languages: English
• ISSNs: 0370-1972

Abstract

<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <sec id="pssb201349222-sec-0001" sec-type="section"> <p>A theoretical model of a ferroelectric tunnel junction with multilevel polarization states is proposed, and the model is capable of achieving multiply (<italic>i.e</italic>., four or eight) logic states by setting different polarization states in the ferroelectric thin film. The tunneling conductance that strongly depends on the barrier potential is calculated by applying a free‐electron direct quantum tunneling method. The dependences of the conductance on bias voltage, barrier width, dielectric constant, and electric polarization are carefully investigated. The results may provide some insights into the realization of ultrahigh‐density memory.</p> </sec> </abstract>