Effect of boron addition on interface microstructure and thermal conductivity of Cu/diamond composites produced by high temperature–high pressure method. Issue 3 (12th November 2013)

• Record Type: Journal Article
• Authors: He, Jinshan; Zhang, Hailong; Zhang, Yang; Zhao, Yameng; Wang, Xitao
• Is Part Of: Physica status solidi. Volume 211:Issue 3(2014:Mar.)
• Page Start: 587
• Page End: 594
• Publication Date: 2013-11-12
• Subjects: Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.201330237
• Languages: English
• ISSNs: 1862-6300

Abstract

<abstract abstract-type="main" xml:lang="en"> <title> <x xml:space="preserve">Abstract</x> </title> <sec id="pssa201330237-sec-0001" sec-type="section"> <p>In order to obtain high thermal conductivity materials for efficient heat sink applications, diamond particles dispersed CuB alloy matrix composites (CuB/diamond composites) containing diamond as high as 90 vol.% were produced by a high temperature–high pressure infiltration method. The thermal conductivity of the Cu–0.3 wt.%B/diamond composite was measured to be 731 W m⁻¹ K⁻¹. The presence of B₄C on the surface of diamond was identified by Raman scattering. The influence of B addition on interface microstructure was clarified to interpret the thermal conductivity enhancement. The results show that B addition can improve the thermal conductivity of Cu/diamond composites produced by high temperature–high pressure infiltration method.</p> </sec> </abstract>