Photosensor Device Based on Few‐Layered WS2 Films. (12th June 2013)

• Record Type: Journal Article
• Authors: Perea‐López, Néstor; Elías, Ana Laura; Berkdemir, Ayse; Castro‐Beltran, Andres; Gutiérrez, Humberto R.; Feng, Simin; Lv, Ruitao; Hayashi, Takuya; López‐Urías, Florentino; Ghosh, Sujoy; Muchharla, Baleeswaraiah; Talapatra, Saikat; Terrones, Humberto; Terrones, Mauricio
• Is Part Of: Advanced functional materials. Volume 23:Number 44(2013)
• Page Start: 5511
• Page End: 5517
• Publication Date: 2013-06-12
• Subjects: Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adfm.201300760
• Languages: English
• ISSNs: 1616-301X

Abstract

<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <p>Few‐layered films of WS₂, synthesized by chemical vapor deposition on quartz, are successfully used as light sensors. The film samples are structurally characterized by Raman spectroscopy, atomic force microscopy, scanning electron microscopy, and high‐resolution transmission electron microscopy. The produced samples consist of few layered sheets possessing up to 10 layers. UV–visible absorbance spectra reveals absorption peaks at energies of 1.95 and 2.33 eV, consistent with the A and B excitons characteristic of WS₂. Current–voltage (<italic>I</italic>–<italic>V</italic>) and photoresponse measurements carried out at room temperature are performed by connecting the WS₂ layered material with Au/Ti contacts. The photocurrent measurements are carried out using five different laser lines ranging between 457 and 647 nm. The results indicate that the electrical response strongly depends on the photon energy from the excitation lasers. In addition, it is found that the photocurrent varies non‐linearly with the incident power, and the generated photocurrent in the WS₂ samples varies as a squared root of the incident power. The excellent response of few‐layered WS₂ to detect different photon wavelengths, over a wide range of intensities, makes it a strong candidate for constructing novel optoelectronic devices.</p> </abstract>