Low‐loss aluminium nitride thin film for mid‐infrared microphotonics. Issue 2 (13th January 2014)

• Record Type: Journal Article
• Authors: Lin, Pao Tai; Jung, Hojoong; Kimerling, Lionel C.; Agarwal, Anu; Tang, Hong X.
• Is Part Of: Laser & photonics reviews. Volume 8:Issue 2(2014:Mar.)
• Page Start: L23
• Page End: L28
• Publication Date: 2014-01-13
• Subjects: Lasers -- Periodicals; Photonics -- Periodicals; Lasers -- Périodiques; Photonique -- Périodiques; 621.36
• DOI: 10.1002/lpor.201300176
• Languages: English
• ISSNs: 1863-8880

Abstract

<abstract abstract-type="graphical" xml:lang="en" id="lpor201300176-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p>Mid‐infrared (mid‐IR) microphotonic devices including (i) straight/bent waveguides and (ii) Y‐junction beam splitters are developed on thin films of CMOS‐compatible sputter deposited aluminum nitride (AlN)‐on‐silicon. An optical loss of 0.83 dB/cm at λ = 2.5 µm is achieved. In addition, an efficient mid‐IR 50:50 beam splitter is demonstrated over 200 nm spectral bandwidth along with a &lt;2% power difference between adjacent channels. With the inherent advantage of an ultra‐wide transparent window (ultraviolent to mid‐IR), our AlN mid‐IR platform can enable broadband optical networks on a chip. <boxed-text content-type="graphic" position="anchor" orientation="portrait"><graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgg4svj1g2f" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></boxed-text></p> </abstract>