An ultra‐black silicon absorber. Issue 2 (15th January 2014)

• Record Type: Journal Article
• Authors: Steglich, Martin; Lehr, Dennis; Ratzsch, Stephan; Käsebier, Thomas; Schrempel, Frank; Kley, Ernst‐Bernhard; Tünnermann, Andreas
• Is Part Of: Laser & photonics reviews. Volume 8:Issue 2(2014:Mar.)
• Page Start: L13
• Page End: L17
• Publication Date: 2014-01-15
• Subjects: Lasers -- Periodicals; Photonics -- Periodicals; Lasers -- Périodiques; Photonique -- Périodiques; 621.36
• DOI: 10.1002/lpor.201300142
• Languages: English
• ISSNs: 1863-8880

Abstract

<abstract abstract-type="graphical" xml:lang="en" id="lpor201300142-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p>An ultra‐black (A &gt; 99%) broadband absorber concept on the basis of a needle‐like silicon nanostructure called Black Silicon is proposed. The absorber comprises Black Silicon established by inductively coupled plasma reactive ion etching (ICP‐RIE) on a highly doped, degenerated silicon substrate. Improved absorbers also incorporate an additional oxide capping layer on the nanostructures and reach an absorptance of <italic>A</italic> &gt; 99.5% in the range of 350 to 2000 nm and <italic>A</italic> ∼ 99.8% between 1000 and 1250 nm. Fabrication of the absorbers is consistent with CMOS standards and requires no lithography. (Picture: Kasper, Friedrich‐Schiller‐University Jena) <boxed-text content-type="graphic" position="anchor" orientation="portrait"><graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgg4svj1k89" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></boxed-text></p> </abstract>