LiBSi2: A Tetrahedral Semiconductor Framework from Boron and Silicon Atoms Bearing Lithium Atoms in the Channels1. Issue 23 (22nd April 2013)

• Record Type: Journal Article
• Authors: Zeilinger, Michael; van Wüllen, Leo; Benson, Daryn; Kranak, Verina F.; Konar, Sumit; Fässler, Thomas F.; Häussermann, Ulrich
• Is Part Of: Angewandte Chemie international edition. Volume 52:Issue 23(2013)
• Page Start: 5978
• Page End: 5982
• Publication Date: 2013-04-22
• Subjects: Chemistry -- Periodicals; 540
• DOI: 10.1002/anie.201301540
• Languages: English
• ISSNs: 1433-7851

Abstract

<abstract abstract-type="graphical" xml:lang="en"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <bold>Silicon swallows up boron</bold>: The novel open tetrahedral framework structure (OTF) of the Zintl phase LiBSi₂ was made by applying high pressure to a mixture of LiB and elemental silicon. The compound represents a new topology in the B‐Si net (called <bold>tum</bold>), which hosts Li atoms in the channels (see picture). LiBSi₂ is the first example where B and Si atoms form an ordered common framework structure with B engaged exclusively in heteronuclear BSi contacts.<boxed-text content-type="graphic" position="anchor" orientation="portrait"><graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgg21fg3bzs" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></boxed-text></p> </abstract>