A Nonvolatile Spintronic Memory Element with a Continuum of Resistance States. (5th November 2012)

• Record Type: Journal Article
• Authors: Fang, Yeyu; Dumas, R. K.; Nguyen, T. N. Anh; Mohseni, S. M.; Chung, S.; Miller, C. W.; Åkerman, Johan
• Is Part Of: Advanced functional materials. Volume 23:Number 15(2013)
• Page Start: 1919
• Page End: 1922
• Publication Date: 2012-11-05
• Subjects: Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adfm.201202319
• Languages: English
• ISSNs: 1616-301X

Abstract

<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <p>A continuum of stable remanent resistance states is reported in perpendicularly magnetized pseudo spin valves with a graded anisotropy free layer. The resistance states can be systematically set by an externally applied magnetic field. The gradual reversal of the free layer with applied field and the field‐independent fixed layer leads to a range of stable and reproducible remanent resistance values, as determined by the giant magnetoresistance of the device. An analysis of first‐order reversal curves combined with magnetic force microscopy shows that the origin of the effect is the field‐dependent population of up and down domains in the free layer.</p> </abstract>